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| Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT132 series D QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT132Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500D 500 1 16 600D 600 1 16 V A A PINNING - TO92 PIN 1 2 3 DESCRIPTION main terminal 2 PIN CONFIGURATION SYMBOL T2 gate main terminal 1 321 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tlead 51 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 1 16 17.6 1.28 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. January 1998 1 Rev 1.000 Philips Semiconductors Product specification Triacs logic level THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient CONDITIONS full cycle half cycle pcb mounted;lead length = 4mm MIN. - BT132 series D TYP. 150 MAX. 60 80 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.0 2.5 2.5 5.0 1.6 4.5 1.2 2.2 1.2 1.4 0.7 0.4 0.1 MAX. 5 5 5 10 10 15 10 15 10 1.70 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. TYP. 5 2 MAX. UNIT V/s s January 1998 2 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT132 series D 1.4 1.2 Ptot / W BT132D Tmb(max) / C IT(RMS) / A 41 53 65 0.8 1.2 BT132D =180 1 1 51 C 1 0.8 0.6 0.4 0.2 0 0 120 90 60 30 77 0.6 89 0.4 101 113 0.2 0 0.2 0.4 0.6 IT(RMS) / A 0.8 1 125 1.2 0 -50 0 50 100 150 Tmb / C Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. 1000 ITSM / A BT132D 3 IT T ITSM IT(RMS) / A BT132D 2.5 time Tj initial = 25 C max 100 dI T/dt limit T2- G+ quadrant 10 10us 24 1.5 1 0.5 0 0.01 100us 1ms T/s 10ms 100ms 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead 51C. VGT(Tj) VGT(25 C) 20 ITSM / A BT136 IT I TSM T time 1.6 1.4 1.2 1 0.8 BT136 15 Tj initial = 25 C max 10 5 0.6 0 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. January 1998 3 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT132 series D 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) BT136D T2+ G+ T2+ GT2- GT2- G+ 12 10 IT / A Tj = 125 C Tj = 25 C Vo = 1.27 V Rs = 0.091 ohms BT136 typ max 8 6 4 2 0 0 -50 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 0.5 TRIAC 100 Zth j-sp (K/W) BT134W 10 unidirectional 1 bidirectional P D tp 0.1 t 0 -50 0 50 Tj / C 100 150 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. dVD/dt (V/us) 3 2.5 2 1.5 1 0.5 TRIAC 1000 100 10 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. January 1998 4 Rev 1.000 Philips Semiconductors Product specification Triacs logic level MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g BT132 series D 2.54 0.66 0.56 1.6 4.2 max 4.8 max 5.2 max 12.7 min 321 Notes 1. Epoxy meets UL94 V0 at 1/8". 0.48 0.40 0.40 min Fig.13. TO92 Variant; plastic envelope. January 1998 5 Rev 1.000 Philips Semiconductors Product specification Triacs logic level DEFINITIONS Data sheet status Objective specification Product specification Limiting values BT132 series D This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 6 Rev 1.000 |
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